| PART |
Description |
Maker |
| SUD06N10-225L |
N-Channel 100-V (D-S) 175C MOSFET
|
VISAY[Vishay Siliconix]
|
| UPA603 UPA603T PA603T G11250EJ1V0DS00 UPA603T-A |
100 mA, 50 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
From old datasheet system
MOS Field Effect Transistor
P-CHANNEL MOS FET 6-PIN 2 CIRCUITS
|
NEC[NEC]
NEC Corp.
|
| SUU06N10-225L |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6.5A I(D) | TO-251
N-Channel 100-V (D-S) 175C MOSFET
|
Vishay
|
| SUM34N10-35 |
N-Channel 100-V (D-S) 175C MOSFET
N-Channel 100-V (D-S) 175C MOSFET
|
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| SUP75P05-08 SUB75P05-08 |
P-Channel 55-V (D-S), 175C MOSFET P通道55 - V（下局副局长）75C MOSFET
P-Channel MOSFET
P-Channel 55-V (D-S) 175C MOSFET
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| SI9948AEY |
P-Channel Enhancement-Mode MOSFET Dual
Dual P-Channel 60-V (D-S), 175C MOSFET
Dual P-Channel 60-V (D-S), 175C MOSFET
Dual P-Channel 60-V (D-S)/ 175C MOSFET
|
Vishay Siliconix
Fairchild Semiconductor
|
| TPC8405 |
Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)
|
Toshiba Semiconductor
|
| SUB75N08-10 SUP75N08-10 |
N-Channel Enhancement-Mode Trans
N-Channel 75-V (D-S), 175C MOSFET
N-Channel 75-V (D-S), 175 Degrees Celcious MOSFET
N-Channel 75 N通道75
|
VISAY[Vishay Siliconix]
Vishay Intertechnology, Inc.
|
| APT5010JVFR |
POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT5010JVRU3 |
POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| APT6010JFLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 47A 0.100 Ohm
|
Advanced Power Technology
|
